SOLICITATION NOTICE
A -- Short-Gate High-Efficiency Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) Producibility - Funding Opportunity Announcement (FOA)
- Notice Date
- 6/27/2017
- Notice Type
- Presolicitation
- NAICS
- 541712
— Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Contracting Office
- Department of the Air Force, Air Force Materiel Command, AFRL/RQK - WPAFB, AFRL/RQK, 2130 Eighth Street, Building 45, Wright-Patterson AFB, Ohio, 45433, United States
- ZIP Code
- 45433
- Solicitation Number
- FOA-AFRL-RQKM-2017-0007
- Archive Date
- 8/26/2017
- Point of Contact
- Melissa Gross, Phone: 937-713-9980, Cathie Stropki, Phone: (937) 713-9901
- E-Mail Address
-
Melissa.gross.1@us.af.mil, catherine.stropki.1@us.af.mil
(Melissa.gross.1@us.af.mil, catherine.stropki.1@us.af.mil)
- Small Business Set-Aside
- N/A
- Description
- Appendix V - Statement of Objectives Appendix IV - Sample Cost Proposal Spreadsheet Appendix III - Summary Business Plan Outline Appendix II - Model Cooperative Agreement Appendix I - Representations & Certifications FOA Initial Announcement This program is anticipated to be a two phase effort in which the initial phase (Phase I) is a 12 month technical effort, and the second phase (Phase II, if awarded) is a 24 month effort plus 3 months for the final report. Phase I will focus on the transferring in whole or in part the Air Force Research Laboratory Sensors Directorate Aerospace Components and Subsystems Technology Division's (AFRL/RYD) 140 nm Aluminum Gallium Nitride (AlGaN)/Gallium Nitride (GaN) on Silicon Carbide (SiC) manufacturing process to the Recipient as well as the development of the Alpha process design kit (PDK). At the conclusion of Phase I, the Recipient will be evaluated in accordance with the Phase II Down-Selection Evaluation Criteria outlined in Section V. Proposal Review Information, Paragraph B. Evaluation Criteria in order to proceed to Phase II. If the Recipient is not chosen for Phase II, a final report will be required 3 months after the conclusion of the Phase I technical effort. During Phase II, the Recipient will validate the 140nm GaN MMIC process and develop the Beta PDK. The Recipient will also improve the manufacturability of their short gate process (sub-140nm). Upon conclusion of Phase II, the optimized best in class process will be commercialized and achieve a Manufacturing Readiness Level (MRL) of 6. Additionally, an open foundry business model will be established with the objective of establishing a pure-play foundry - completely open to both defense and commercial entities regardless of competitive status. The objective is to establish an open foundry that enables access for all DoD requirements regardless of competitive status. The technical focus of this program will be on improving manufacturability, affordability, and reliability of a 140 nm GaN MMIC process while pursuing further process node reduction toward 90 nm.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/spg/USAF/AFMC/AFRLWRS/FOA-AFRL-RQKM-2017-0007/listing.html)
- Record
- SN04559560-W 20170629/170627235752-d2cc75dd8e0ea0d98424f57059bc1808 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
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