SOLICITATION NOTICE
93 -- 4H SiC HPSI Wafer - NNX1761284Q
- Notice Date
- 1/18/2017
- Notice Type
- Combined Synopsis/Solicitation
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- NASA Shared Services Center (NSSC), Building 1111, Jerry Hlass Road, Stennis Space Center, Mississippi, 39529, United States
- ZIP Code
- 39529
- Solicitation Number
- NNX1761284Q
- Archive Date
- 2/9/2017
- Point of Contact
- Jonah L. Berry, Phone: 2288136120
- E-Mail Address
-
jonah.l.berry@nasa.gov
(jonah.l.berry@nasa.gov)
- Small Business Set-Aside
- Total Small Business
- Description
- This is the capability statement for Cree Inc. Specification for 4H-SiC (Quote Number 19303) The SiC wafers shall have the following specifications: 1. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8° off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One n-type, > 1 x 1019 cm-3 epilayer of 3.0 μm thick. 2. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8° off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One n-type, > 1 x 1019 cm-3 epilayer of 5.0 μm thick. 3. Three 4H-SiC, high-purity semi-insulating, research grade, 3" dia., 8° off-axis, > 1E5 ohm-cm, both sides polished/silicon face with CMP finish. One p-type, > 1 x 1020 cm-3 epilayer of 5.0 μm thick. 4. SIMS analysis of epilayers. 5. Delivery to be no later than 8 weeks from date of receipt of PO.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/notices/1f3d2b54debdc5de29d3d79aadce2b9f)
- Place of Performance
- Address: NASA / Glenn Research Center, Cleveland, Ohio, 44135-3127, United States
- Zip Code: 44135-3127
- Zip Code: 44135-3127
- Record
- SN04374234-W 20170120/170118234539-1f3d2b54debdc5de29d3d79aadce2b9f (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
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