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FBO DAILY ISSUE OF SEPTEMBER 10, 2009 FBO #2847
SOLICITATION NOTICE

A -- Investigation of Optical Properties of Black Si

Notice Date
9/8/2009
 
Notice Type
Presolicitation
 
Contracting Office
US Army, Army Contracting Command, Joint Munitions and Lethality (JM&L) Contracting Center, Picatinny Arsenal, New Jersey 07806-5000
 
ZIP Code
07806-5000
 
Solicitation Number
W15QKN-09-T-0313
 
Response Due
9/22/2009
 
Archive Date
9/22/2010
 
Point of Contact
Richard Wheelwright, Contract Specialist, (973)724-3941
 
E-Mail Address
Richard Wheelwright
(richard.wheelwright@us.army.mil)
 
Small Business Set-Aside
N/A
 
Description
The United States Army Contracting Command, Joint Munitions and LethalityContracting Center, Joint Armaments Contracting Center, Picatinny Arsenal, NJ 07806-5000, intends to award a Sole Source requirement for The Preparation of Black Si by treating ion-implanted Si samples with PLM, and the measurement of the optical properties of the material so created. The period of performance will be one year from date of award. The Contract type shall be a Firm Fixed Price purchase order. This requirement is in accordance with 10 U.S.C. 2304(c)(1) as implemented by FAR 6.302-1(a)(2)(iii)(B), Unacceptable delays in fulfilling the agencys requirements. (1) Implement standard Harvard metal contact deposition strategy on Si:Ch samples. Deposit contacts in coplanar geometry. Verify that contacts are ohmic. (2) Implement standard Harvard metal contact deposition strategy on Si:Ch samples. Deposit contacts in comb geometry. Verify that contacts are ohmic. (3) Prepare SOI:S samples with good ohmic coplanar contacts, for transient measurements at RPI. (4) Etch backside of selection of SOI:S samples to match with samples measured by RPI, measure absorptance for comparison with RPI measurements. (5) Prepare nn+ junction samples at 1E15, 1E16 S/cm2 dose, annealed at four different temperatures (RT, 250 C, 400 C, 550 C). Deposit comb contact on each sample. Measure IV curves under 1 sun illumination. (6) (a )Research effect of varying laser fluence near Si ablation threshold Irradiate samples at fluences approaching and slightly exceeding the Si ablation threshold on p-type and n-type samples. (b) Characterize the surface morphology and NIR absorptance of the samples. (c) Deposit contacts and send to RPI for responsivity measurements. (d) Characterize the IR absorptance. (7) Prepare selection of samples in Hall geometry for Hall effect measurements, carrier mobility spectrum measurements. Deposit contacts. (8) Travel to project participant meetings when scheduled by the ARDEC Project Officer. All inquires must include company name, full address, point of contact and title, telephone number and email address. Funds are currently available. Interested parties should notify Mr. Richard J. Wheelwright, Contract Specialist, via email at: richard.wheelwright@us.army.mil.
 
Web Link
FBO.gov Permalink
(https://www.fbo.gov/spg/USA/USAMC/DAAE30/W15QKN-09-T-0313/listing.html)
 
Record
SN01945181-W 20090910/090909084053-57f93d87abc7e856f98a60145b76319b (fbodaily.com)
 
Source
FedBizOpps Link to This Notice
(may not be valid after Archive Date)

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