SOLICITATION NOTICE
59 -- ULTRATIN SILICON ON INSULATOR WAFERS
- Notice Date
- 1/23/2007
- Notice Type
- Solicitation Notice
- NAICS
- 334419
— Other Electronic Component Manufacturing
- Contracting Office
- NASA/Goddard Space Flight Center, Code 210.M, Greenbelt, MD 20771
- ZIP Code
- 20771
- Solicitation Number
- NNG07183225L
- Response Due
- 2/6/2007
- Archive Date
- 1/23/2008
- Small Business Set-Aside
- N/A
- Description
- NASA/GSFC has a requirement for Silicone on Insulator(SOI)bonded wafer in accordance with the following specifications: Wafer specifications- SOI bonded wafers Wafers shall be composed of single-crystal silicon wafers, bonded together with a silicon dioxide interface. The silicon dioxide shall be thermally grown and defect free. The top layer silicon (henceforth referred to as the device wafer) shall be of excellent quality single-crystal silicon and shall be free of gross defects as observed by the XTEM method. The seed layer of the device wafers shall be fabricated via the Smart-Cut method, utilizing ion implantation and bonding. Note: Grinding and etch-back shall not be considered acceptable methods of device layer production. In addition SIMOX wafers shall not be accepted. The front surface of the device wafer shall be polished to semiconductor standards according to the specifications, which follow. The bottom layer silicon wafer (henceforth referred to as the handle wafer) shall be of excellent quality single-crystal silicon and shall be free of gross defects as observed by the XTEM method. The back-side of the handle wafer shall be polished to semiconductor standards according to the specifications which follow. Specifications: Item 1. Silicon on insulator wafers as follows 1.1 Device wafer: a) Diameter: 100.00 mm +/- 0.50 mm b) Total thickness 1.45 ? 0.029 microns composed of 0.34 microns SOI plus 1.11 microns epitaxy c) Within wafer total thickness variation: 0.029 measured at 400 points with 5 mm edge exclusion d) Wafer-to-wafer total thickness variation: 0.05 microns measured at 400 points with 5 mm edge exclusion e) Crystal orient: <100> ?0.50 degrees f) Dopant: Boron g) Resistivity: 14-22 ohm-cm, 15% ctr/10mm from edge h) Etch pit density < 2/square cm (HF), < 1E4/sq. (Seeco Method) i) Free of microbubbles and voids. 6 mm exclusion from edge j) Polished 1.2 Handle wafer: a) Diameter: 100mm ?0.50mm b) Thickness: 450 microns +/- 10 microns c) Within wafer total thickness variation: 5 microns (Maximum-Minimum) d) Wafer-to-wafer total thickness variation: 10 microns (Maximum-Minimum) e) Crystal orient: <100> ?0.50 degrees f) Crystal orientation with respect to device wafer: ?0.25 degrees g) Flats: SEMI standard <110> +/- .50 degrees, 30-35 mm h) Dopant: Boron i) Resistivity: 14-22 ohm-cm, 10% ctr/10mm from edge j) Polish: Double Side Polish 1.3 Buried Silicon dioxide layer1 (joining device wafer and spacer wafer): a) Thickness: 0.40 microns ?0.0075 microns b) Pin hole density: <0.2/cm^2 Wafers are to be appropriately double-wrapped for class-10, clean-room use. NASA/GSFC intends to purchase the items from SOITEC USA, Peabody, MA. The results from the market research identified SOITEC as the only company that provided and meets the above requirements. The authority is 10 U.S.C. 2304(c)(1), Only One Responsible Source. The Government intends to acquire a commercial item using FAR Part 12. The procurement will be processed using FAR Part 13 Simplified Acquisition procedures, and the Government intends to solicit and negotiate with only one source, but quotes timely received by the response date will be considered. DO Rating is DO-C9. This synopsis shall not be construed as a commitment by the Governement, nor will the Government pay for information solicited. Interested organizations may submit their capabilities and qualifications to perform the effort in writing via fax, e-mail, or mail to: NASA/GSFC, ATTN: Janicea L. McCree, Code 210.3, Building 11, Room S209, 8800 Greenbelt Road, Greenbelt, MD 20771 not later than 4:30 p.m. EST local time on February 6th, 2007. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether or not to conduct this procurement on a competitive basis. A determination by the Government not to compete this proposed effort on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the government. Oral communications are not acceptable in response to this notice. All responsible sources may submit an offer which shall be considered by the agency. An Ombudsman has been appointed. See NASA Specific Note "B". All technical questions should be submitted to Janicea L. McCree via e-mail at Janicea.L.McCree@nasa.gov or facimile at 301-286-9159 no later than 01/31/2007. Any referenced notes may be viewed at the following URLs linked below.
- Web Link
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- Record
- SN01217738-W 20070125/070123221228 (fbodaily.com)
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