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FBO DAILY ISSUE OF MARCH 09, 2003 FBO #0464
SOLICITATION NOTICE

R -- Characterization and modeling of Silicon Carbide (SiC) power diodes and active switching devices

Notice Date

3/7/2003
 

Notice Type

Solicitation Notice
 

Contracting Office

Department of Commerce, National Institute of Standards and Technology (NIST), Acquisition and Logistics Division, 100 Bureau Drive, Building 301, Room B129, Mail Stop 3571, Gaithersburg, MD, 20899-3571
 

ZIP Code

20899-3571
 

Solicitation Number

Reference-Number-03-812-3098
 

Archive Date

4/1/2003
 

Point of Contact

Barbara Guise, Purchasing Agent, Phone (301) 975-3572, Fax (301) 975-8884, - Randy Schroyer, Purchasing Agent, Phone (301) 975-6314, Fax (301) 975-8884,
 

E-Mail Address

barbara.guise@nist.gov, randy.schroyer@nist.gov
 

Description

The National Institute of Standards and Technology (NIST) intends to procure on a sole source basis with Ty Richard McNutt, Fayetteville, AR under the authority of FAR 13.106-1(b) Only One Source Reasonable Available, to characterize and model silicon carbide (SiC) power diodes and active switching devices. Specific tasks include: a) developing models, extraction procedures, and test equipment for SiC power devices produced by the Wide Bandgap Power Device program; and, b) performing measurements necessary to characterize each device type and sample. The models will be implemented in the MAST modeling language and will be validated for the conditions tested in NIST test systems. The outcomes for the work will be a better understanding of the performance of the devices produced in the Wide Bandgap Program, model code that is suitable for designing electronic systems that utilize the new devices, and data and analysis to form the basis of a publication. This sole source procurement since Ty Richard McNutt is the only known researcher with the experience needed in using HDL language to model silicon carbide power devices and he is intimately familiar with the silicon power diode model available in Analogy's Saber simulator to which the SiC power diode characteristics will be applied. A fixed price Purchase Order with a performance period of thirty-five weeks will be awarded on or about March 18, 2003 using Simplified Acquisition Procedures. Interested parties may identify their interest and capabilities to respond to the requirement. This notice of intent is not a request for competition. However, the Government will consider all responses received by the closing date. Written responses to this synopsis shall contain sufficient documentation to establish a bona fide capability to fulfill the requirement. A request for Quotation will not be issued. See Note 26.
 

Place of Performance

Address: NATIONAL INSTITUTE OF STANDARDS & TECHNOLOGY, 100 BUREAU DRIVE, GAITHERSBURG, MD

Zip Code: 20899

Country: USA
 

Record

SN00273701-W 20030309/030307213315 (fbodaily.com)
 

Source

FedBizOpps.gov Link to This Notice
(may not be valid after Archive Date)

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